www.irf.com 12/19/00 irgc14c40lb irgc14c40lc IRGC14C40LD ignition igbt die in wafer form igbt with on-chip gate-emitter and gate-collector clamps features ? most rugged in industry ? logic-level gate drive ? > 6kv esd gate protection ? low saturation voltage ? high self-clamped inductive switching energy ? qualified for the automotive qualified [q101] . description the advanced igbt process family includes a mos gated, n-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. unique features include on-chip active voltage clamps between the gate-emitter and gate-collector which provide over voltage protection capability in ignition circuits. collector emitter gate r 2 r 1 terminal diagram notes: 1) part number irgc14c40lb are die in wafer form probed and uncut; irgc14c40lc are die on film probed and cut; and IRGC14C40LD are probed die in wafle pack. 2) refer- ence packaged parts are irgs14c40l, irgsl14c40l, and irgb14c40l. pd - 94060 packaged characteristics: ? bv ces = 370v min, 430v max ? i c @ t c = 110c = 14a ? v ce(on) typ= 1.2v @7a @25c ? i l(min) =11.5a @25c,l=4.7mh electrical characteristics (wafer form) mechanical data die outline parameter description guaranteed (min, max) test conditions @ t j = 25c v ce (on) collector-to-emitter saturation voltage 2.65v max i c = 10a, v ge = 4.5v bv ces colletor-to-emitter breakdown voltage 370v min, 430v max r g = 1k ohm, i ces = 25ma, v ge = 0v v ge(th) gate threshold voltage 1.2v min, 2.4v max v ge = v ce , i c = 1ma i ces zero gate voltage collector current 10a max r g = 1k ohm, v ce = 300v i ges gate-to-emitter leakage current 0.32ma min, 1ma max v ge = +/-10v t j t stg operating junction and storage temperature range -40c to 175c nominal backmetal composition, (thickness) cr - ni/v - ag, (0.1m - 0.2m - 0.25m) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimensions 0.141" x 0.164" wafer diameter 150mm, with std. < 100 > flat wafer thickness, tolerance .015" +/- .003" relevant die mechanical dwg. number 01-5467 minimum street width 100m reject ink dot size 0.25mm diameter minimum ink dot location consistent throughout same wafer lot recommended storage environment store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c < 1.270 t olerance = + /- 0.102 < [.050] t olerance = + /- [.004] > 1.270 t olerance = + /- 0.203 > [.050] t olerance = + /- [.008] 1. all dime ns ions are s hown in millimet e rs [inche s ]. < 0.635 t olerance = + /- 0.013 < [.0250] t olerance = + /- [.0005] > 0.635 t olerance = + /- 0.025 > [.0250] t olerance = + /- [.0010] is = curre nt s ens e sk = source kelvin g = gat e bonding pads: overall die: wi dt h length wi dt h 4. dime ns ional t ol er ance s : length & & s = source 3. let ter des ignat ion: 2. cont roll ing dime ns ion: [inch]. not e s : e = emitter g e 4.166 [.164] 3.581 [.141] 0.932 [.037] 0.943 [.037] 0.562 [.022] 0.762 [.030]
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